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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP55N055SDG
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
ORDERING INFORMATION
The NP55N055SDG is N-channel MOS Field Effect
Transistor designed for high current switching applications.
FEATURES
? Channel temperature 175 degree rating
? Super low on-state resistance
R DS(on)1 = 9.5 m ? MAX. (V GS = 10 V, I D = 28 A)
? Low C iss : C iss = 3200 pF TYP.
? Logic level drive type
ABSOLUTE MAXIMUM RATINGS (T A = 25°C)
PART NUMBER
NP55N055SDG
PACKAGE
TO-252 (MP-3ZK)
(TO-252)
Drain to Source Voltage (V GS = 0 V)
Gate to Source Voltage (V DS = 0 V)
Drain Current (DC) (T C = 25 ° C)
V DSS
V GSS
I D(DC)
55
±20
±55
V
V
A
Drain Current (pulse)
Note1
I D(pulse)
±220
A
Total Power Dissipation (T C = 25 ° C)
Total Power Dissipation (T A = 25 ° C)
Channel Temperature
Storage Temperature
P T1
P T2
T ch
T stg
77
1.2
175
? 55 to +175
W
W
° C
° C
Repetitive Avalanche Current
Repetitive Avalanche Energy
Note2
Note2
I AR
E AR
27
73
A
mJ
Notes 1. PW ≤ 10 μ s, Duty Cycle ≤ 1%
2. T ch < 150 ° C, V DD = 28 V, R G = 25 ? , V GS = 20 → 0 V
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
R th(ch-C)
R th(ch-A)
1.95
125
° C/W
° C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16864EJ2V0DS00 (2nd edition)
Date Published January 2005 NS CP(K)
The mark
shows major revised points.
Printed in Japan
2004
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